کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006155 | 1461384 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thickness-dependent optoelectronic properties of CuCr0.93Mg0.07O2 thin films deposited by reactive magnetron sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CuCr0.93Mg0.07O2 thin films were successfully deposited by DC reactive magnetron sputtering at 1123 K from metallic targets. The influence of film thickness on the structural and optoelectronic properties of the films was investigated. X-ray diffraction (XRD) results revealed that all the films had a delafossite structure with no other phases. The optical and electrical properties were investigated by UV-VIS spectrophotometer and Hall measurement, respectively. It was found that the optoelectronic properties exhibited a thickness-dependent behavior. The optical band gap and the average transmittance of the films showed a monotonous decrease with respect to the increase in thickness. The average transmittance in the visible region decreased from 67% to 47% as the thickness increased from ~70 nm to ~280 nm. Simultaneously, the conductivity of the films fell from 1.40 Sâcmâ1 to 0.27 Sâcmâ1. According to Haacke's figure of merit (FOM), a film with a maximum FOM value of about 1.72Ã10â7 Ωâ1 can be achieved when the thickness is about 70 nm (Ïâ 1.40 S·cmâ1 and Tav. â67%).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 295-302
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 295-302
نویسندگان
Hui Sun, Mohammad Arab Pour Yazdi, Cedric Ducros, Sheng-Chi Chen, Eric Aubry, Chao-Kuang Wen, Jang-Hsing Hsieh, Frederic Sanchette, Alain Billard,