کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5006167 1461385 2017 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improved physical models for advanced silicon device processing
ترجمه فارسی عنوان
مدل های فیزیکی بهبود یافته برای پردازش سیلیکون پیشرفته
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی
We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 62, May 2017, Pages 62-79
نویسندگان
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