کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5006188 1461387 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Studies on selenium rich Lead Chalcogenide Pb5Se95−xZnx (X =0, 2.5, 5, and 10) thin films composed of NPs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Studies on selenium rich Lead Chalcogenide Pb5Se95−xZnx (X =0, 2.5, 5, and 10) thin films composed of NPs
چکیده انگلیسی
The as-prepared Se rich (maximum of 95%) samples have been synthesized by melt-quenching method. Thin films of Pb5Se95−XZnX (X =0, 2.5, 5, and 10) have been deposited onto glass substrate (at 100 K), via thermal evaporation method. HRTEM and XRD pattern depict polycrystalline, cubic nanoparticles of average size 21 nm. The particles size has been found to be decreasing with increase in dopent content; this has been verified by FWHM values of the XRD peaks. The stoichiometries of the constituent elements of as-prepared thin films have been confirmed by the EDAX analysis. PL-emission spectra analysis reveals blue shift and peak broadening trends with increase in dopent concentration and laser irradiation time. This is the indication of decrease in particle size with increase in dopent concentration and laser-irradiation time. Thus, defects in as-synthesized lattice are increased which in turn increase the optical band gap. UV/Visible spectroscopy suggests a direct band-gap which increases with increase in Zn content and laser-irradiation time in the deposited thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 60, 15 March 2017, Pages 53-59
نویسندگان
, , , ,