کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006218 | 1461390 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods](/preview/png/5006218.png)
چکیده انگلیسی
An investigation of the threading dislocations (TDs) density in two high quality GaN epitaxial layers grown on sapphire (Al2O3) substrate, with the thickness of 300 and 1000Â nm, respectively, is presented in this paper. In the case of GaN300 sample, taking into account that the finite size effect exerts an increased influence, further advanced methods are necessary to find the correct results besides the standard analysis of the Full Width at Half Maximum (FWHM) of the X-ray rocking curves peaks as in the case of the thicker sample, GaN1000. Thus, we explored the tails of the rocking curves using a universal power law fit and subsequently, we used modified version of the Williamson-Hall plots. Analysis of the XRD profiles allowed us to avoid the overestimation of the threading dislocations density determined by the influence of the correlation between dislocations. Moreover, we successfully separate the contribution of the strain and size broadening based on the analysis of refined Williamson Hall plots and demonstrate the nearly uniform dislocation density depth distribution of the GaN studied films, with no supplementary nucleation or annihilation centers are present inside the epitaxial film using, both grazing incidence and grazing exit configurations of the asymmetric geometry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 57, January 2017, Pages 32-38
Journal: Materials Science in Semiconductor Processing - Volume 57, January 2017, Pages 32-38
نویسندگان
Cosmin Romanitan, Raluca Gavrila, Mihai Danila,