کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5006238 1461390 2017 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization and optical properties of bismuth chalcogenide films prepared by pulsed laser deposition technique
ترجمه فارسی عنوان
خصوصیات و خواص اپتیکی فیلم های کلوژناید بیسموت تهیه شده با روش رسوب لیزر پالسی
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی
Thin films of Bi-based chalcogenides were prepared by pulsed laser deposition (PLD) technique according to the stoichiometric formula: Bi2(Se1−xTex)3. Their optical properties were studied aiming to find the suitable area of application and the optimum composition amongst the samples under study. X-ray diffraction analysis proved the crystallinity of the deposited samples; in addition, surface roughness and films homogeneity were studied by atomic force microscopy (AFM) confirming the suitability of PLD technique to prepare homogenous and smooth films of the concerned alloys. Absorption coefficient calculations showed higher absorption values of 5×105 and 6×105 cm−1 for Te contents of 90% and 100% in the Bi2(Se1−xTex)3 system respectively. Optical band gap of the concerned films were calculated and found to be in the range of 0.76-1.11 eV, exhibiting comparable values with the previously reported by other authors. Optical studies conformed direct and allowed transitions in all films. Refractive index (n) and dielectric constants (Ɛr) and (Ɛi) were calculated and studied as a function of the wavelength. Values and behavior of (n), (Ɛr) and (Ɛi) indicated strong dependence on the composition and the wavelength range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 57, January 2017, Pages 210-219
نویسندگان
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