کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006240 | 1461390 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of surface-modified Mo back contact on post-selenized Cu(In,Ga)Se2 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this work, the influences of surface-modified Mo back contacts on the morphology of Cu layers and quality of Cu(In,Ga)Se2 (CIGS) thin films are investigated. One method of sputtering treatment to modify the Mo surface effectively improved the adhesion between the Cu and Mo layers. However, Cu layers electrodeposited on the various modified Mo surfaces created different morphological structures, which impacted the CIGS thin films. First, an alloyed Cu-In-Ga film based on the Cu layer of smooth structure would experience homogeneous element diffusion compared to the Cu layer of the rugged structure. Second, the CIGS film based on the smooth Cu-covered substrate exhibited a uniform surface profile with regular crystals, while the CIGS film based on a rugged one exhibited an uneven surface profile with several irregular crystals. Additionally, the smooth Cu-covered substrate reduced the adverse phase separation of CuInSe2 and CuGaSe2 more effectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 57, January 2017, Pages 227-232
Journal: Materials Science in Semiconductor Processing - Volume 57, January 2017, Pages 227-232
نویسندگان
Yunxiang Huang, Yong Tang, Wei Yuan, Qinghui Wang, Shiwei Zhang,