کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006249 | 1461389 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of fluorine-doped tin oxide films prepared by an improved sol-gel process
ترجمه فارسی عنوان
خصوصیات فیلم های اکسید قلع دوتایی فلوراید تهیه شده توسط فرایند بهبود حلال ژل
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کلمات کلیدی
روند سل ژل، روش تبخیر، اکسید قلع گداخته فلوراید، مالکیت فتوکپی، فیلم های،
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
Fluorine-doped tin oxide (FTO) films were prepared by an improved sol-gel process, in which FTO films were deposited on glass substrates using evaporation method, with the precursors prepared by the conventional sol-gel method. The coating and sintering processes were combined in the evaporation method, with the advantage of reduced probability of films cracking and simplified preparation process. The effects of F-doping contents and structure of films on properties of films were analyzed. The results showed the performance index (ΦTC=3.535Ã10â3 Ωâ1 cm) of the film was maximum with surface resistance (Rsh) of 14.7 Ω cmâ1, average transmittance (T) of 74.4% when F/Sn=14 mol%, the reaction temperature of the sol was 50 °C, and the evaporation temperature was 600 °C in muffle furnace, and the film has densification pyramid morphology and SnO2âxFx polycrystalline structure with tetragonal rutile phase. Compared with the commercial FTO films (ΦTC=3.9Ã10â3 Ωâ1 cm, Rsh=27.4 Ω cmâ1, T=80%) produced by chemical vapor deposition (CVD) method, the ΦTC value of FTO films prepared by an improved sol-gel process is close to them, the electrical properties are higher, and the optical properties are lower.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 58, February 2017, Pages 1-7
Journal: Materials Science in Semiconductor Processing - Volume 58, February 2017, Pages 1-7
نویسندگان
X.H. Shi, K.J. Xu,