کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5006274 1461392 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Phonon-plasmon coupling in Si doped GaN nanowires
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Phonon-plasmon coupling in Si doped GaN nanowires
چکیده انگلیسی
The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon-plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A1(LO) mode for all samples. This behavior points to phonon-plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 55, 15 November 2016, Pages 63-66
نویسندگان
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