کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010173 | 1462199 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High sensitivity pH sensing on the BEOL of industrial FDSOI transistors
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
In this work we demonstrate the use of Fully Depleted Silicon On Insulator (FDSOI) transistors as pH sensors with a 23 nm silicon nitride sensing layer built in the Back-End-Of-Line (BEOL). The back end process to deposit the sensing layer and fabricate the electrical structures needed for testing is detailed. A series of tests employing different pH buffer solutions has been performed on transistors of different geometries, controlled via the back gate. The main findings show a shift of the drain current (ID) as a function of the back gate voltage (VB) when different pH buffer solutions are probed in the range of pH 6 to pH 8. This shift is observed at VB voltages swept from 0 V to 3 V, demonstrating the sensor operation at low voltage. A high sensitivity of up to 250 mV/pH unit (more than 4-fold larger than Nernstian response) is observed on FDSOI MOS transistors of 0.06 µm gate length and 0.08 µm gate width.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 134, August 2017, Pages 22-29
Journal: Solid-State Electronics - Volume 134, August 2017, Pages 22-29
نویسندگان
Lama Rahhal, Getenet Tesega Ayele, Stéphane Monfray, Jean-Pierre Cloarec, Benjamin Fornacciari, Eric Pardoux, Celine Chevalier, Serge Ecoffey, Dominique Drouin, Pierre Morin, Philippe Garnier, Frederic Boeuf, Abdelkader Souifi,