Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor

Gate induced interlayer tunneling field effect transistor (iTFET) is studied analytically considering vertical heterostructure of boron nitride (BN) layer sandwiched between two monolayers of molybdenum disulfide (MoS2). The device structure in comparison to recently reported work shows subthreshold slope close to 60 mV/decade and operation at upper GHz.