Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

This paper presents a reliability study of an AlGaN/GaN high electron mobility transistor (HEMT) by the photon emission (PE) and the spectral photon emission (SPE) techniques. The backside PE analysis of the studied AlGaN/GaN HEMT identifies PE signatures at the gate foot edge on the drain side, and at two new positions: under the middle of the gate or at the gate foot edge on the source side. The SPE analysis of the localized signatures defines the deep level trap energy Ec-1.35 eV which seems to be related to an interstitial carbon defect that forms along dislocations, or an omnipresent defect such as C or possibly dislocations.