کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5147081 | 1497347 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and optical properties of InSb/GaAs QDSC for photovoltaic
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical and optical properties of InSb/GaAs QDSC for photovoltaic Electrical and optical properties of InSb/GaAs QDSC for photovoltaic](/preview/png/5147081.png)
چکیده انگلیسی
This paper focuses on the simulation and optimization of electrical and optical properties such as current density-voltage (J-V), external quantum efficiency (EQE) and the photoluminescence spectra (PL) of InSb/GaAs quantum dot solar cell (QDSC). The InSb QDs have been inserted in the intrinsic region of p-i-n GaAs solar cell. Our results have been shown that 30 InSb/GaAs QD layers provide a relative enhancement of 22.35% and 29.30% of the short-circuit current and the efficiency, respectively. With the same number of the QD layers, the absorption range edge of low energy photons has been extended from 900 to 1400Â nm. The electrical features obtained for InSb/GaAs QDSC have been compared with those obtained for InAs/GaAs QDSC in goal to show the better structure. The PL spectra has been also compared with experimental result for the same structure. Moreover, the QDSC has been optimized with respect to the thickness of QDs. The optimal conversion efficiency of 10 QD layers is improved from 14.85% to 18.30% by increasing the thickness of the QDs from 5Â nm to 20Â nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 42, Issue 30, 27 July 2017, Pages 19518-19524
Journal: International Journal of Hydrogen Energy - Volume 42, Issue 30, 27 July 2017, Pages 19518-19524
نویسندگان
A. Aissat, F. Benyettou, J.P. Vilcot,