Electronic and magnetic properties of Ga, Ge, P and Sb doped monolayer arsenene

Optimized top (above) and side (down) geometries (a), and the band structure (BS) and PDOS (b) of a 4×4×1 monolayer arsenene. h means the height of doped atom X (X = Ga, Ge, P and Sb) in the buckled structure.217