Memory effect in polymer brushes containing pendant carbazole groups

Poly(9-(2-(4-vinyl(benzyloxy)ethyl)-9H-carbazole)) brushes have been prepared via surface-initiated ATRP on Si chips. The volatile memory behavior with an ON/OFF current ratio up to 105, is observed in a device fabricated from the Si-g-PVBEC chips. The switching performance of the Si-g-PVBEC/Al device is superior to that of the conventional spin-coated Si/PVBEC/Al device.