The effect of laser treatment on the morphology and structure of CdSb-Cd1-Ñ MnÑ Te and CdSb-In4(Se3)1-Ñ Ð¢e3Ñ thin film heterojunctions

Peculiarities of heteroepitaxial growth of CdSb thin films on AIIBVI and AIIIBVI single crystal substrates were studied by atomic-force and scanning electron microscopy. New thin film CdSb-Cd1-хMnхTe and CdSb-In4(Se3)1-хТe3х heterojunctions were obtained by high-frequency cathode sputtering of CdSb single crystal target. Laser treatment of CdSb films using millisecond YAG-laser with energy density of 0.1-4.5 J/сm2 has been carried out in order to modify and improve their structure and phase state. Stoichiometry of composition and granular polycrystalline structure of CdSb films on Cd1-хMnхTe and In4(Se3)1-хТe3х substrates have been confirmed by SEM and AFM studies. A stepwise growth processes of grains were detected under laser treatment in CdSb films. Anisotropic shape of grains in CdSb films was found depending on crystallographic orientation of In4Se3 substrate surface.