Low coverage Si(1 1 1)√7 × √3-In reconstruction: Deposition rate effect

Si(1 1 1)-In surface reconstructions for submonolayer coverages were investigated at room temperature using X-ray photoelectron spectroscopy, Auger electron spectroscopy and low-energy electron diffraction. Deposition rate influence on the formation of surface structures is reported. It was observed that for sufficiently low deposition rate and certain annealing process Si(1 1 1)√7 × √3-In surface reconstruction at coverage as low as 0.2 ML is present.