کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5351146 | 1503649 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Benzotriazole as a passivating agent during chemical mechanical planarization of Ni-P alloy substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
With the rapid increase of data storage density on computer hard disk drives (HDDs), the operation distance between read/write head and disk surface has fallen to just a few nanometers. Chemical mechanical planarization (CMP) has been selected as the best process to produce high quality surface finish during the manufacturing of Ni-P alloy substrates for HDD applications. Herein we report, for the first time, the use of benzotriazole (BTA) as a passivating agent in CMP slurries to decrease the surface roughness (Ra). Results show that the average Ra of the polished surfaces is decreased to 0.2 nm in a 5 μm Ã 5 μm scan area with the adding of 2 mM BTA. X-ray photoelectron spectroscopy (XPS) and electrochemical studies results further prove the interaction between BTA and Ni-P surface and the formation of an effective passivating layer on Cu in CMP slurries containing BTA.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 315, 1 October 2014, Pages 190-195
Journal: Applied Surface Science - Volume 315, 1 October 2014, Pages 190-195
نویسندگان
Yan Mu, Mingjie Zhong, Kenneth J. Rushing, Yuzhuo Li, Devon A. Shipp,