کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5353919 | 1503680 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of the interfacial reaction in HfO2 on Si-passivated GaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The physical and electrical effects caused by interfacial reactions of HfO2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO2/Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO2 and a mixture of HfO2 and SiO2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO2 result in the increase of the interfacial defect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 283, 15 October 2013, Pages 375-381
Journal: Applied Surface Science - Volume 283, 15 October 2013, Pages 375-381
نویسندگان
Sang Han Park, Yu Seon Kang, Jimin Chae, Hyo Jin Kim, Mann-Ho Cho, Dae-Hong Ko, Young-Chul Byun, Hyoungsub Kim, Sang Wan Cho, Chung Yi Kim, Jung-Hye Seo,