کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5356088 | 1503589 | 2016 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire
ترجمه فارسی عنوان
خصوصیات ساختاری و الکترونیکی گرافن رشد شده توسط رسوب بخار شیمیایی و انتقال آن به یاقوت کبود
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
چکیده انگلیسی
We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (â¼9Â ÃÂ 1012Â cmâ2) together with quite low carrier mobility (â¼1350Â cm2/VÂ s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 378, 15 August 2016, Pages 397-401
Journal: Applied Surface Science - Volume 378, 15 August 2016, Pages 397-401
نویسندگان
Frédéric Joucken, Jean-François Colomer, Robert Sporken, Nicolas Reckinger,