The reflectivity of Mo/Ag/Au ohmic contacts on p-type GaN for flip-chip light-emitting diode (FCLED) applications

The Mo/Ag/Au contact for flip-chip light-emitting diode (FCLED) applications is examined on its contact resistance and light reflectance. A high reflectance of 90% is achieved in un-annealed contact, but a strong inter-diffusion of ohmic metals and GaN during the annealing process is found to result in poor reflectance (55% at the wavelength of 465 nm). The secondary ion mass spectrometry (SIMS) depth profiles indicate that a wide inter-diffusion region existed in the annealed contacts; thus the low reflectivity of the Mo/Ag/Au-annealed contacts can be attributed to the strong inter-diffusion of Au and Ag.