کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5364029 | 1388310 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Effects of post-hydrogen plasma annealing (HPA) on a-Si:H/SiO2 and nc-Si/SiO2 multilayers have been investigated and compared. It is found that photoluminescence (PL) from hydrogen-passivated samples was improved due to the reduction of non-radiative recombination defects. Some interesting difference is that during HPA, atomic hydrogen can directly passivate defects of a-Si:H/SiO2, which results in the reappearance of luminescence band at 760Â nm, while for nc-Si/SiO2, hydrogen passivation requires additional thermal annealing after nc-Si/SiO2 multilayer was treated by HPA. It is indicated that higher atomic mobility is needed to passivate defects at nc-Si/SiO2 interface compared with a-Si:H/SiO2 interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 21, 31 August 2007, Pages 8647-8651
Journal: Applied Surface Science - Volume 253, Issue 21, 31 August 2007, Pages 8647-8651
نویسندگان
Yunjun Rui, Deyuan Chen, Jun Xu, Wei Li, Zhanhong Cen, Xinfan Huang, Kunji Chen,