کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365294 | 1388328 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures](/preview/png/5365294.png)
چکیده انگلیسی
The forward bias current-voltage (I-V) characteristics of Al/p-Si (MS) Schottky diodes with native insulator layer were measured in the temperature range of 80-300 K. The obtained zero bias barrier height ΦB0(I-V), ideality factor (n) and series resistance (Rs) determined by using thermionic emission (TE) mechanism show strong temperature dependence. There is a linear correlation between the ΦB0(I-V) and n because of the inhomogeneties in the barrier heights (BHs). Calculated values from temperature dependent I-V data reveal an unusual behaviour such that the ΦB0 decreases, as the n and Rs values are increasing with decreasing absolute temperature, and these changes are more pronounced especially at low temperatures. Such temperature dependence of BH is contradictory with the reported negative temperature coefficient of the barrier height. In order to explain this behaviour we have reported a modification in the expression reverse saturation current Io including the n and the tunnelling factor (αΧ1/2δ) estimated to be 15.5. Therefore, corrected effective barrier height Φbef.(I-V) versus temperature has a negative temperature coefficients (α = â2.66 Ã 10â4 eV/K) and it is in good agreement with negative temperature coefficients (α = â4.73 Ã 10â4 eV/K) of Si band gap. In addition, the temperature dependent energy distribution of interface states density Nss profiles was obtained from the forward bias I-V measurements by taking into account the bias dependence of the Φe and n. The forward bias I-V characteristics confirm that the distribution of Nss, Rs and interfacial insulator layer are important parameters that the current conduction mechanism of MS Schottky diodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 11, 30 March 2007, Pages 5056-5061
Journal: Applied Surface Science - Volume 253, Issue 11, 30 March 2007, Pages 5056-5061
نویسندگان
Å. Altındal, H. Kanbur, D.E. Yıldız, M. Parlak,