Keywords: مکانیزم های هدایت; Graphene; Graphene quantum dots; Graphene oxide; Reduced graphene oxide; Graphene-based; Non-volatile memory; Conduction mechanisms;
مقالات ISI مکانیزم های هدایت (ترجمه نشده)
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Keywords: مکانیزم های هدایت; Tristable switching; Graphene quantum dot; Poly(methyl methacrylate); Electrical characteristic; Filament; Conduction mechanisms;
Keywords: مکانیزم های هدایت; Neutral red; Thin films; Conduction mechanisms; Photovoltaic properties; Heterojunction solar cell
Keywords: مکانیزم های هدایت; Phthalocyanine derivative; InPcCl-D/Si heterojunction device; Conduction mechanisms; Capacitance–voltage characteristics
Electron transport in surface modified TiO2 nanoparticles
Keywords: مکانیزم های هدایت; TiO2; Modification; Electrical conductivity; Conduction mechanisms;
Temperature dependent charge transport mechanisms in highly crystalline p-PbS cubic nanocrystals grown by chemical bath deposition
Keywords: مکانیزم های هدایت; Lead sulfide cubic nanocrystal; Chemical bath deposition; Electrical conductivity; Activation energy; Conduction mechanisms;
Fabrication of transparent bistable switching memory device using plasmapolymerized hexamethyldisiloxane layers with embedded graphene quantum dots
Keywords: مکانیزم های هدایت; Bistable switching; Graphene quantum dot; Hexamethyldisiloxane; Plasma polymerization; Conduction mechanisms;
Stable charge retention in graphene-MoS2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices
Keywords: مکانیزم های هدایت; Graphene; Molybdenum disulphide; PET substrates; Resistive switching; Conduction mechanisms; Flexible electronics;
Conduction mechanisms, dynamics and stability in ReRAMs
Keywords: مکانیزم های هدایت; ReRAM; Conduction mechanisms; Dynamics; Stability;
Nature of electrical transport properties of nanocrystalline ZnIn2Se4 thin films
Keywords: مکانیزم های هدایت; ZnIn2Se4 thin films; Atomic force microscope; Electrical transport properties; Conduction mechanisms;
Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer
Keywords: مکانیزم های هدایت; Au/GaP Schottky contacts; Transport properties; Barrier inhomogeneity; Conduction mechanisms;
Investigation of composition effect on electrical properties of noncrystalline GeSe2âxSnx (0 â¤Â x â¤Â 0.8) thin films
Keywords: مکانیزم های هدایت; Chalcogenide; Ge-Se-Sn; Conduction mechanisms; Electrical conductivity;
Using carbon quantum dots to improve the resistive switching behavior of ZnO nanorods device
Keywords: مکانیزم های هدایت; Composite structure; ZnO nanorod; Carbon quantum-dots; ON/OFF resistance ratio; Conduction mechanisms;
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature
Keywords: مکانیزم های هدایت; High-k gate dielectrics; Optical constant; Electrical properties; Ti incorporation; Sol-gel; Conduction mechanisms;
Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application
Keywords: مکانیزم های هدایت; C. Electrical properties; Metal-oxide-semiconductor; Sol–gel; Conduction mechanisms; High-k gate dielectrics
A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures
Keywords: مکانیزم های هدایت; High-k dielectrics; Al-doped HfO2; Al-doped ZrO2; Trapping; Charge-trapping memory; Conduction mechanisms
Microstructure, optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films
Keywords: مکانیزم های هدایت; C. Electrical properties; High-k gate dielectrics; Metal–oxide–semiconductor; Conduction mechanisms; Sputtering
Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures
Keywords: مکانیزم های هدایت; Metal-oxide-semiconductor structures; Leakage current; Conduction mechanisms;
Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films
Keywords: مکانیزم های هدایت; Nonvolatile memory devices; Gallium zinc tin oxide; Solution process; Bipolar resistive switching behavior; Conduction mechanisms
Electrical and photovoltaic properties of Gaussian distributed inhomogeneous barrier based on tris(8-hydroxyquinoline) indium/p-si interface
Keywords: مکانیزم های هدایت; Inq3 films; Conduction mechanisms; Ideality factor; Barrier height; Solar cells;
Geometrical and crystal structures, optical absorption and device characterization of N-(5-{[antipyrinyl-hydrazono]-cyanomethyl}-[1,3,4]thiadiazol-2-yl)-benzamide
Keywords: مکانیزم های هدایت; Optical band gap; Heterojunction; Conduction mechanisms; Ideality factor; Barrier height; Series resistance;
Memory programming of TiO2âx films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching
Keywords: مکانیزم های هدایت; Thin films; Resistive memory devices; Non-volatile memories; Conduction mechanisms; Oxygen vacancies; Conducting filaments; Electrical characterization; Sputtering;
Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O3 thin film
Keywords: مکانیزم های هدایت; PZT thin films; Electrical characterizations; Conduction mechanisms; Pulsed laser deposition
Positive magnetoresistive effect in Si/SiO2(Cu/Ni) nanostructures
Keywords: مکانیزم های هدایت; Swift heavy ion track technology; Dielectric film; Nanostructures; Conduction mechanisms; Magnetoresistance; Magnetic field sensors
Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2 â x thin films
Keywords: مکانیزم های هدایت; Thin films; Resistive memory devices; Non-volatile memories; Conduction mechanisms; Oxygen vacancies; Conducting filaments; Electrical characterization; Sputtering;
Conduction mechanisms in tungsten-polyoxometalate self-assembled molecular junctions
Keywords: مکانیزم های هدایت; Molecular junctions; Polyoxometalates; Self-assembly monolayers; Conduction mechanisms
Current-conduction mechanisms in Au/n-CdTe Schottky solar cells in the wide temperature range
Keywords: مکانیزم های هدایت; Au/n-CdTe heterostructure; Temperature dependence; Conduction mechanisms; Gaussian distribution; Barrier height; Series resistance
Thermally activated conduction mechanisms in Silicon Nitride MIS structures
Keywords: مکانیزم های هدایت; Silicon nitride; Conduction mechanisms; TSDC; DC conductivity
Effect of a silicon nitride buffer layer on the electrical properties of tantalum pentoxide films
Keywords: مکانیزم های هدایت; Buffer layer; Reactive sputtering; Dielectric constant; Conduction mechanisms
Evidence for a conduction through shallow traps in Hf-doped Ta2O5
Keywords: مکانیزم های هدایت; Hf-doped Ta2O5; High-k dielectrics; Conduction mechanisms;
High-k HfO2–Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity
Keywords: مکانیزم های هدایت; High-k stack; Mixed HfO2–Ta2O5; Conduction mechanisms
Electrical characteristics of mixed Zr-Si oxide thin films prepared by ion beam induced chemical vapor deposition at room temperature
Keywords: مکانیزم های هدایت; Zr-Si oxides; Thin films; Ion beam induced chemical vapor deposition; Static permittivity; Conduction mechanisms; Dielectric breakdown;
Conduction mechanisms in Ta2O5 stack in response to rapid thermal annealing
Keywords: مکانیزم های هدایت; High-k stack; Tantalum pentoxide; RTA; Conduction mechanisms
Water and ammonia influence on the conduction mechanisms in polyacrylic acid films
Keywords: مکانیزم های هدایت; Polyacrylic acid; Impedance spectroscopy; Conduction mechanisms
Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures
Keywords: مکانیزم های هدایت; 73.30.+y: 73.40.Qv: 73.40.Ns; Series resistance; Interface states; Native insulator layer; Conduction mechanisms; I-V characteristics;
Frequency dependence of loss tangent of thermally annealed undoped lead iodide crystals in the dark
Keywords: مکانیزم های هدایت; 61.66.Fn; 72.20.Fr; 73.20.Hb; 81.40.EfLead iodide; Loss tangent; Annealing effect; Polytypism; Conduction mechanisms