کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5461118 | 1516184 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of composition effect on electrical properties of noncrystalline GeSe2âxSnx (0 â¤Â x â¤Â 0.8) thin films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Amorphous GeSe2âxSnx (0 â¤Â x â¤Â 0.8) films were papered by vacuum evaporation method. X-Ray diffraction conferred the amorphicity of these films. The direct current conductivity, Ïdc, of GeSe2-xSnx thin films have been carried out as a function of molar compositions in the temperature range of 298-444 K. The results show that Ïdc increased with increasing the Sn composition, which might be because of the move of Fermi level. In addition, the conductivity is a thermally invigorated process having two conduction mechanisms. In the high temperatures area, the conductivity has additionally been construed utilizing Meyer-Neldel rule. In the low temperatures area, the conductivity has been construed utilizing Mott's variable range hopping conduction and Mott's parameters were computed. Additionally, the current density-voltage characteristics have been measured for all thin film samples. The experimental data of all studied samples fits well with the theory of space charge limited conduction (SCLC). The density of state (DOS) has been ascertained utilizing SCLC measurement. The increasing in DOS with increasing of concentricity of Sn might be because of the increasing in the defect states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 710, 5 July 2017, Pages 349-354
Journal: Journal of Alloys and Compounds - Volume 710, 5 July 2017, Pages 349-354
نویسندگان
A.A.A. Darwish, S.R. Alharbi, S.E. Al Garni, K.F. Abd El-Rahman, M.M. El-Nahass,