Electrical and photovoltaic properties of Gaussian distributed inhomogeneous barrier based on tris(8-hydroxyquinoline) indium/p-si interface

Hybrid organic/inorganic heterojunction solar cells are fabricated for the first time by depositing tris(8-hydroxyquinoline) indium (Inq3) films onto p-type silicon (p-Si) single crystals via a thermal evaporation technique. The structural characterization of the films was achieved by X-ray diffraction and scanning electron microscopy. The electrical and photovoltaic properties of the Au/Inq3/p-Si/Al heterojunction were investigated in terms of the current-voltage (I-V) measurements. The dark I-V characteristics of the device are measured at different temperatures ranging from 300 to 400 K in which the operating conduction mechanisms and the basic diode parameters such as ideality factor, barrier height and series resistance are determined. At forward bias voltages V≤0.4 V, the I-V characteristics have been analyzed on the basis of the thermionic emission theory. With increasing temperature, the ideality factor is found to decrease, while the barrier height is found to increase. This behavior has been explained in terms of the barrier inhomogeneities at the Inq3/p-Si interface. At forward bias voltages 0.4