Nitrogen binding behavior in ZnO films with time-resolved cathodoluminescence

ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable ZnN bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO.