کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
538865 1450317 2016 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Uprising nano memories: Latest advances in monolithic three dimensional (3D) integrated Flash memories
ترجمه فارسی عنوان
خاطرات نانویی صعود: آخرین پیشرفت در حافظه یکپارچه فلش یکپارچه (سه بعدی)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی


• The latest advances in the monolithic 3D integration of the NAND Flash memory are surveyed.
• The key technical challenges and important aspects of various designs are highlighted.
• The mechanisms that overcome the technical barriers are discussed.
• By comparing different designs, the most promising solutions are marked.
• Future prospects and expected market demand of NAND Flash memory are explained.

Flash memory industry has showed remarkable steady progress during the last few years. This achievement is owed to the development of the 3D NAND Flash structures. This paper reviews the latest advances in the monolithic 3D integration of the NAND Flash memory. It highlights key technical challenges and uses important aspects and characteristics of various designs in order to illustrate mechanisms that overcome the technical barriers. Furthermore, the most promising solutions are marked by comparing advantages and disadvantages of different designs. Finally, future prospects and expected market demand of NAND Flash memory are addressed.

Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 164, 1 October 2016, Pages 75–87
نویسندگان
,