TCAD performance analysis of high-K dielectrics for gate all around InAs nanowire transistor considering scaling of gate dielectric thickness

• Performance of GAA InAs nanowire transistor has been studied using SiO2, ZrO2, HfO2 and La2O3 as gate dielectrics.
• La2O3 shows improved device performance in terms of Ion, Ioff, gm and Ion/Ioff
• La2O3 has exceptional capability of suppressing the short channel effects (SCEs).
• Problem of leakage current associated with thinning of gate oxide has been solved by La2O3.
• La2O3 as gate dielectric could be used for ultra-fast, low power and high performance nanowire transistors.

Gate dielectric thickness is an important parameter in designing nanowire FETs. In this letter, the performance potential of SiO2, ZrO2, HfO2 and La2O3 gate dielectrics for InAs based gate all-around nanowire transistor has been reported based on TCAD analysis. The results demonstrate that La2O3 can replace SiO2, ZrO2, HfO2 owing to its high current driving capability (44% increase), high mobility, low leakage current, high transconductance, high switching speed (~ 25 μs), excellent charge density, better sub-threshold slope (~ 60 mV/decade), reduced DIBL (~ 10.4%) and also the effective oxide thickness of La2O3 is found to be 0.13 nm.

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