Resistive switching characteristics in manganese oxide and tantalum oxide devices

• The resistive switching behaviors with heterostructure were demonstrated.
• The monodisperse oxide nanoparticles were chemically synthesized.
• The device showed bipolar switching and repeatable self-compliance properties.
• The bipolar switching was caused by the formation and rupture of conductive filaments in oxide layer.
• The stable self-compliance property was demonstrated.

The monodisperse manganese oxide nanoparticles with an average diameter of 30 nm were chemically synthesized. The nanoparticles assembled as a close-packed monolayer on Pt bottom electrode by dip-coating and annealing process. The Ta/Ta2O5/MnO/Pt device was fabricated. The bipolar resistive switching behaviors could be caused by the formation and rupture of conductive filaments in the switching layers. The stable self-compliance property was demonstrated which can be attributed to the high resistance Ta/Ta2O5 interface, the Schottky barrier of Ta/Ta2O5, and the discontinuity of conduction band at Ta2O5 and MnO interface. The retention characteristics of Ta/Ta2O5/MnO/Pt device were investigated. The conduction mechanisms of Ohmic conduction, space charge limited conduction, Schottky conduction and Poole–Frenkel emission had been investigated for resistance switching mechanism.

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