Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

• The Ir-gate AlSb/InAs HEMT on Si substrate has been studied with reliability evaluation.
• The Ir-gate exhibited a superior metal work function.
• The Schottky barrier height of InAs/AlSb on silicon was improved.
• TEM, SIMS, and low frequency noise measurement were adopted to proof device stability.

In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

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