کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
538954 | 1450343 | 2015 | 6 صفحه PDF | دانلود رایگان |
• RTA annealing can mitigate bulk defects in Ta2O5 by repairing oxygen vacancies.
• Multiple electrical and material analyses on two types of substrates.
• The interface on top of a single crystalline substrate had fewer structural defects.
• The dielectrics on a single crystalline substrate possessed superior characteristics.
Samples of high-k Ta2O5 film as a high-k gate dielectric sputtered on both a single crystalline substrate and a polycrystalline silicon substrate and annealed at different temperatures were fabricated and compared. Samples were examined using various material and electrical analyses, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force spectroscopy (AFM), equivalent oxide thickness (EOT), JE characteristics, charge-to-breakdown Weibull plots, and gate voltage shift versus stress time. The research concludes that a Ta2O5 dielectric on a single crystalline substrate had fewer structural defects than a high-k/polysilicon interface, forming a dielectric with better material properties and electrical reliability.
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Journal: Microelectronic Engineering - Volume 138, 20 April 2015, Pages 36–41