Light output enhancement of GaN-based light-emitting diodes by maskless surface roughening

• Surface morphologies were roughened without the use of masks.
• Surface morphologies were optimized by varying Cl2 concentration.
• Surface morphologies were optimized by adjusting RF bias power.
• Light output of surface-roughened LEDs was enhanced by 43.2%.

In the present paper, the surface of GaN-based light-emitting diodes (LEDs) was roughened by inductively coupled plasma reactive ion etching (ICP-RIE) system. Without the utilization of etching mask, the roughened surface morphologies were optimized by varying Cl2 concentration in Cl2/BCl3/N2 mixing gas and adjusting RF bias power parameters of the ICP system. There was no obvious degradation of electrical properties of surface-roughened LEDs after the ICP dry etching process. Furthermore, the light output power of surface-roughened LEDs was enhanced by 43.2%, compared with conventional LEDs.

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