کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
539235 | 1450374 | 2013 | 10 صفحه PDF | دانلود رایگان |
During the last decades it has been shown that the Atomic Force Microscope (AFM) can be used in non-contact mode as an efficient lithographic technique capable of manufacturing nanometer sized devices on the surface of a silicon wafer. The AFM nanooxidation approach is based on generating a potential difference between a cantilever needle tip and a silicon wafer. A water meniscus builds up between the tip and the wafer, resulting in a medium for oxyions to move due to the high electric field in the region. A simulator for nanooxidation with a non-contact AFM, implemented in a Level Set environment, was developed. The presented simulator implements the growth of thicker oxides by analyzing the potential, electric field, and ion concentrations at the ambient/oxide and oxide/silicon interfaces, while the growth of thin oxides assumes a single liquid/silicon interface, which is modeled as an infinitely long conducting plane. The nanodot shapes have been shown to follow the electric field and hence the surface charge distribution shape; therefore, a Monte Carlo particle distribution for the surface charge density is generated for two-dimensional and three-dimensional topography simulations in a Level Set framework.
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► A local oxidation nanolithography simulator is created in the Level Set framework.
► 3D simulations include oxide–ambient, oxide–silicon, and trapping layer interfaces.
► Potential and electric field between the needle tip and the substrate is calculated.
► Nanodot shape generated to follow the surface charge density at the silicon surface.
► Monte Carlo particle distribution for surface charge density is calculated.
Journal: Microelectronic Engineering - Volume 107, July 2013, Pages 23–32