Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

We fabricated a nanothin-NbO2-layer-based Pt/NbO2/Pt stack and investigated its threshold-switching characteristics, which can be attributed to metal–insulator-transition, at the nanoscale. The Pt/NbO2/Pt device exhibited a high degree of stability at temperatures as high as 160 °C as well as excellent scalabilities both in terms of the active device area (diameter ∼ 10 nm) and thickness (∼10 nm). In addition, the device also exhibited uniform switching behavior and high switching speeds (∼22 ns). These characteristics make the device suitable for use as a selection device in high density cross-point type structures for resistive switching memories (ReRAMs).

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► We fabricated a nanothin layer of Pt/NbO2/Pt stack which shows threshold-switching property.
► The Pt/NbO2/Pt device exhibited a high degree of stability at temperatures as high as 160 °C.
► The Pt/NbO2/Pt device showed excellent scalabilities both the active device area and thickness.
► The device also exhibited uniform switching behavior and high switching speeds (∼22 ns).
► These characteristics are suitable for a selection device in cross-point-type ReRAMs.