کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539259 1450374 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evaluation of plasma parameters on PEALD deposited TaCN
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Evaluation of plasma parameters on PEALD deposited TaCN
چکیده انگلیسی

In this article influence of plasma parameters on TaCN deposition using Plasma Enhanced Atomic Layer Deposition (PEALD) is studied. TaCN is deposited on 300 mm Si substrate with the organometallic precursor Tertiary-ButylimidoTrisDiEthyl-aminoTantalum (TBTDET) and H2/Ar plasma at different plasma power. Thickness, density, roughness, resistivity, crystallography and composition of the obtained layers were analysed by X-ray Reflection (XRR), 4 points probe measurement, X-ray Diffraction (XRD) and X-ray Photoelectron Spectrometry (XPS) respectively. Results show an evolution of the material with the increase of plasma power from a TaN-like to a TaC-like material.

Figure optionsDownload as PowerPoint slideHighlights
► Tuning TaCN deposited material from TaN-like to TaC-like was possible using plasma.
► Influence of plasma power on TaCN properties is higher than influence of plasma energy.
► Mechanism of TBTDET molecule breaking down by H2 plasma was introduced.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 107, July 2013, Pages 156–160
نویسندگان
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