Thermodynamic study on the chemical vapor deposition of silicon nitride from the SiCl4-NH3-H2 system

Equilibrium concentration distribution of the 161 species involved in the process of CVD preparation of silicon nitride with SiCl4:NH3:H2 = 1:3:5 precurses at 1000 Pa and in 300-2000 K (the species having a maximum concentration larger than 10−6 mole are shown in this figure).