Improved LDMOS performance with buried multi-finger gates

• SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated.
• The BFG smoothen the electric field distribution along the drift region in the off-state.
• The BFG enhance the carrier accumulation at the surface of drift region in the on-state.
• BFG LDMOS exhibits improved BV, Ron and gm performance.

SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift region (on-state). The proposed BFG SOI LDMOS shows a 13.6% increase of breakdown voltage, 24.4% reduction of on-resistance and 14.4% increase of the transconductance compared with the reference SOI LDMOS without BFG.

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