The stability and electronic structures of B or/and N doped SiC nanotubes: A first-principles study

► The ones B and N located at adjacent Si and C sites are most energetically favorable. ► The energetic advantages of BN co-doping may be due to the charge compensation. ► The SWSiCNTs can be modified ranging from semiconductor to conductor through doping. ► The changes of electrical conductivity are dependent on chirality and doping atoms.