کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5395461 | 1505712 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular to the (111) surface, demonstrate the projected Dirac cones at the ί and M¯ points of the surface Brillouin zone. In addition, we observe a Dirac-cone-like band structure at the Î point of the bulk Brillouin zone, whose Dirac energy is largely different from those at the ί and M¯ points.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 219, August 2017, Pages 35-40
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 219, August 2017, Pages 35-40
نویسندگان
Yi Zhang, Zhongkai Liu, Bo Zhou, Yeongkwan Kim, Lexian Yang, Hyejin Ryu, Choongyu Hwang, Yulin Chen, Zahid Hussain, Zhi-Xun Shen, Sung-Kwan Mo,