کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5395593 | 1392250 | 2015 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-sensitivity ultraviolet photoemission spectroscopy technique for direct detection of gap states in organic thin films
ترجمه فارسی عنوان
روش اسپکتروسکوپی عکسبرداری با اشعه ماوراء بنفش با حساسیت بالا برای تشخیص مستقیم حالت های شکاف در فیلم های نازک آلی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
چکیده انگلیسی
We developed ultrahigh sensitivity, low-background ultraviolet photoemission spectroscopy (UPS) technique which does not introduce detectable radiation damages into organic materials. The UPS allows to detect density of states of the order of â¼1016 states eVâ1Â cmâ3 even for radiation-sensitive organic films, this results being comparable to electrical measurements of charge trapping centers. In this review we introduce the method of ultrahigh sensitivity photoemission measurement and we present some results on the energy distribution of gap states in pentacene (Pn) films deposited on SiO2 and Au(1Â 1Â 1) substrate. For Pn/SiO2 thin film the results show that exposure to inert gas (N2 and Ar) atmosphere produces a sharp rise in gap states from 1016 to 1018 states eVâ1Â cmâ3 and pushes the Fermi level closer to the valence band (0.15-0.17Â eV), as does exposure to O2 (0.20Â eV), while no such gas-induced effects are observed for Pn/Au(1Â 1Â 1) system. The results demonstrate that these gap states originate from small imperfections in the Pn packing structure, which are induced by gas penetration into the film through the Pn crystal grain boundaries. Similar results were obtained for CuPc/F16CuPc thin films, a prototypical example of donor/acceptor interface for photovoltaic application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 204, Part A, 1 October 2015, Pages 29-38
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 204, Part A, 1 October 2015, Pages 29-38
نویسندگان
Fabio Bussolotti,