کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5395662 | 1505725 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic and crystal structures of thermoelectric CaMgSi intermetallic compound
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the electronic and crystal structures of a new thermoelectric material, CaMgSi compound, by using synchrotron radiation photoemission spectroscopy (SR-PES), synchrotron radiation X-ray powder diffraction (SR-XRD) measurements, and electronic band structure calculation to understand the way leading to improvement in the thermoelectric properties of this material. Electronic band structure calculation of the CaMgSi compound using the crystal structure determined from SR-XRD measurement showed a semi-metallic electronic structure with a pseudo-gap at the Fermi level. In contrast to the predicted semi-metallic electronic structure, the SR-PES results showed a small semiconductor-like gap at the Fermi level. This result revealed that the CaMgSi compound is a Mott-type insulator owing to strongly correlated electrons effect in the Ca 3d and Mg 3p states being well hybridized with those in the Si 3p states. The observed electronic structure of the CaMgSi compound suggests that an optimal carrier doping exists to best control the n- and p-type thermoelectric properties and enhance the power factors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 206, January 2016, Pages 18-23
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 206, January 2016, Pages 18-23
نویسندگان
Hidetoshi Miyazaki, Manabu Inukai, Kazuo Soda, Nobufumi Miyazaki, Nozomu Adachi, Yoshikazu Todaka, Yoichi Nishino,