کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5395820 | 1505734 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and electronic structure studies of semiconducting thin films of fluorine-monosubstituted fused-thiophene derivative
ترجمه فارسی عنوان
مطالعات رشد و ساختار الکترونی از فیلمهای نازک نیمه رسانای مشتق شده با فلوئور-مونوسیده-تیوفن
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
چکیده انگلیسی
Formation of high quality interface between metal and organic semiconducting film is important in realizing high-performance organic electronics devices. We have investigated the room-temperature growth of organic semiconducting thin films of monofluorine-substituted 2-phenylbenzo[d,dâ²]thieno[3,2-b;4,5-bâ²]-dithiophene (m-FP-BTDT) on Au(1Â 1Â 1), and Au(1Â 1Â 1) modified by benzenethiolate (Au-BT) by means of synchrotron-based electron spectroscopies. XPS intensity analysis shows that on Au(1Â 1Â 1), m-FP-BTDT film grows according to Stranski-Krastanov (SK) mode in which the first monolayer (ML) is completed before the 3D growth sets in. In comparison, the initial growth of m-FP-BTDT on Au-BT proceeds via a pseudo layer-by-layer growth mechanism in which the growth of a new layer starts after the underneath layers are almost finished. Orientations of m-FP-BTDT molecules for the thick films on two substrates remain different, despite the large thickness. NEXAFS data show that m-FP-BTDT molecules on Au-BT adopt a more erected configuration, resulting in a better cofacial Ï-stacking. Work function for the thick m-FP-BTDT film on Au-BT is determined with UPS as 4.62Â eV and the hole injection barrier as 0.95Â eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 196, October 2014, Pages 49-53
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 196, October 2014, Pages 49-53
نویسندگان
Jian-Wei Lue, Yu-Hsiang Lin, Yaw-Wen Yang,