کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
539601 | 871260 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Fabrication of submicron photon sieve using E-beam lithography and X-ray lithography Fabrication of submicron photon sieve using E-beam lithography and X-ray lithography](/preview/png/539601.png)
In this paper, a new hybrid method to fabricate submicron photon sieve is proposed, where the E-beam lithography and the X-ray lithography are used. It is found that 2.8 μm thickness of the polyimide film, 400 nm thickness of the ZEP-520 and 280 μC/cm2 exposure dose are good for E-beam lithography, while 500 nm thickness of the PMMA and 30 s developing time are good for X-ray lithography. We have successfully fabricated the photon sieve with these parameters (the diameter of photon sieve: 250 μm, the focal length: 150 μm, the diameter of the outmost pinhole: 420 nm). Some key techniques of this method are analyzed respectively, and the error analysis are done at the end of this paper. It provides a direction of nanoscale optical element fabrication with higher resolution and lower cost.
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Journal: Microelectronic Engineering - Volume 88, Issue 10, October 2011, Pages 3178–3181