Resolving the multi-gap electronic structure of USb2 with interband self-energy

The simple yet effective method of calculating a renormalized band structure based on approximate interband self-energy is shown. Application to a multi-gap f-electron system USb2 is discussed and details are given. The method allows a direct visualization of multiple band renormalizations in N band systems, helping to resolve and picture the complex interacting band structure of USb2.