Effect of Ar+ ion etching treatment on the surface work function of Hg3In2Te6 wafer

Synchrotron radiation photoemission spectroscopy (SRPES) was employed to investigate the changes of surface work function of Hg3In2Te6 wafer under different Ar+ ion etching parameters. Hg concentration on the Hg3In2Te6 surface decreased with increasing the etching time. Meanwhile, the calculated work function and electron affinity of Hg3In2Te6 wafer also decreased with increasing the etching time. It was found that the decrease of work function of the Hg3In2Te6 wafer was mainly caused by the decrease of electron affinity which was closely related to the increase of electron concentration due to the escape of Hg2+ on the surface of Hg3In2Te6 wafer.