کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5396330 | 1505755 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
RIXS approach to local environment around impurity atoms in diluted magnetic semiconductors and dielectrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
The use of resonant inelastic X-ray scattering (RIXS) to understand local environment around magnetic atoms in various diluted magnetic semiconductors (DMS) and dielectrics (DMD) has been overviewed. The overall spectroscopic results of transition-metal-doped GaAs DMS and wide band-gap oxide DMD systems show that the magnetic transition-metal dopants can occupy not only cation sites but also interstitial ones and the interactions between substituted and interstitial magnetic ions play a very important role on the nature of magnetic properties of these materials. This suggests that a careful verification of presence/absence of structural defects is required, especially for when the size of defect configuration is very small (less than few nm).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 181, Issues 2â3, August 2010, Pages 202-205
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 181, Issues 2â3, August 2010, Pages 202-205
نویسندگان
G.S. Chang, E.Z. Kurmaev, L.D. Finkelstein, A. Moewes, A. Dinia,