XPS and depth resolved SXES study of HfO2/Si interlayers

Analysis of interfaces between (1 0 0)Si crystal and 5-nm thin HfO2 overlayers was conducted and the results obtained by a X-ray photoelectron spectroscopy (XPS) in combination with Ar+ ion sputtering were compared to the results obtained by a non-destructive X-ray emission spectroscopy with depth resolution (DRSXES). It was found that the atomic layer deposition of hafnia results in a thinner Si oxide interlayer than the metallo-organic chemical vapour deposition. By DRSXES thickness of this interlayer was found to be 1.5 ± 0.1 nm.