کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5396331 1505755 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
XPS and depth resolved SXES study of HfO2/Si interlayers
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
XPS and depth resolved SXES study of HfO2/Si interlayers
چکیده انگلیسی
Analysis of interfaces between (1 0 0)Si crystal and 5-nm thin HfO2 overlayers was conducted and the results obtained by a X-ray photoelectron spectroscopy (XPS) in combination with Ar+ ion sputtering were compared to the results obtained by a non-destructive X-ray emission spectroscopy with depth resolution (DRSXES). It was found that the atomic layer deposition of hafnia results in a thinner Si oxide interlayer than the metallo-organic chemical vapour deposition. By DRSXES thickness of this interlayer was found to be 1.5 ± 0.1 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 181, Issues 2–3, August 2010, Pages 206-210
نویسندگان
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