کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5396485 | 1505751 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemical characterization of SiO2/SiC interface after nitridation treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Chemical characterization of SiO2/SiC interface after nitridation treatment Chemical characterization of SiO2/SiC interface after nitridation treatment](/preview/png/5396485.png)
چکیده انگلیسی
The nitridation of SiO2/SiC interfaces has shown great promise as a means of achieving high quality gate oxides for SiC MOSFET structures. It is of critical importance to characterize the interfacial nitrogen and understand the beneficial effects of nitridation treatment. In this work, the SiO2/SiC structure was prepared by direct oxidation in nitrous oxide (N2O), followed by a nitric oxide (NO) post-annealing. X-ray absorption spectroscopy (XAS) of Si L- and K-edges, recorded simultaneously in the surface sensitive total electron yield and the interface/bulk sensitive fluorescence yield, have been used to investigate the SiO2/SiC interface of a series of samples after the nitridation treatment. The results show that nitridation introduces nitrogen into the SiO2/SiC interface to form silicon nitride (SiN bonds). Oxygen has also possibly been incorporated into SiO2/SiC interface in the oxynitride form. Great sensitivity of XAS in probing Si, SiC, SiO2 and SiNx at different depths is also demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 184, Issues 3â6, April 2011, Pages 245-248
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 184, Issues 3â6, April 2011, Pages 245-248
نویسندگان
Y.F. Hu, H. Piao, J. Fronheiser, K. Matocha,