کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5396500 1505751 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Excited electron dynamics of bismuth film grown on Si(1 1 1) surface by interferometric time-resolved two-photon photoemission spectroscopy
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Excited electron dynamics of bismuth film grown on Si(1 1 1) surface by interferometric time-resolved two-photon photoemission spectroscopy
چکیده انگلیسی
We have carried out studies on the excited-electron dynamics in the single and poly crystalline Bi films by interferometric time-resolved two-photon photoemission spectroscopy (ITR-2PPE). The fast energy relaxation times of the excited electrons due to the electron-electron scattering were observed. The energy relaxation times were less than 15 fs and those of the single crystalline film are faster than those of the poly crystalline film. The faster energy relaxation times of the single crystalline Bi film are attributed to the higher scattering rate induced by the higher densities of states by appearance of the surface states in the vicinity of the Fermi level.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 184, Issues 3–6, April 2011, Pages 309-312
نویسندگان
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