کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5396662 | 1505757 | 2010 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
XPS and angle resolved XPS, in the semiconductor industry: Characterization and metrology control of ultra-thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: XPS and angle resolved XPS, in the semiconductor industry: Characterization and metrology control of ultra-thin films XPS and angle resolved XPS, in the semiconductor industry: Characterization and metrology control of ultra-thin films](/preview/png/5396662.png)
چکیده انگلیسی
This review discusses the development of X-ray photoelectron spectroscopy, XPS, used as a characterization and metrology method for ultra-thin films in the semiconductor wafer processing industry. After a brief explanation of how the relative roles of XPS and Auger electron spectroscopy, AES, have changed over the last 15 years or so in the semiconductor industry, we go into some detail as to what is implied by metrology, as opposed to characterization, for thin films in the industry, and then describe how XPS, and particularly angle resolved XPS, ARXPS, have been implemented as a metrology “tool” for thickness, chemical composition, and non-destructive depth profiling, of transistor gate oxide material, a key requirement in front-end processing. We take a historical approach, dealing first with the early use for SiO2 films on Si(1Â 0Â 0), then moving to silicon oxynitride, SiOxNy in detail, and finally and briefly HfO2-based material, which is used today in the most advanced devices (32Â nm node).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volumes 178â179, May 2010, Pages 433-448
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volumes 178â179, May 2010, Pages 433-448
نویسندگان
C.R. Brundle, Giuseppina Conti, Paul Mack,